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DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11F; BUW11AF Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated
Front view
MSB012
BUW11F; BUW11AF
ook, halfpage
handbook, halfpage
2 1
MBB008
3
1
2
3
Fig.1 Simplified outline (SOT199) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUW11F BUW11AF VCEO collector-emitter voltage BUW11F BUW11AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUW11F BUW11AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 4 tp < 20 ms; see Fig.2 Th 25 C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W s open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 5 N force on centre of package. 2. Mounted with heatsink compound and 30 5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW11F BUW11AF VCEO collector-emitter voltage BUW11F BUW11AF ICsat collector saturation current BUW11F BUW11AF IC ICM IB IBM Ptot Tstg Tj Notes 1. Mounted without heatsink compound and 30 5 N force on centre of package. 2. Mounted with heatsink compound and 30 5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) isolation capacitance from collector to external heatsink collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature tp < 20 ms Th 25 C; see Fig.3; note 1 Th 25 C; see Fig.3; note 2 see Figs 2 and 4 tp < 20 ms; see Fig.2 open base VBE = 0 CONDITIONS PARAMETER CONDITIONS note 2 thermal resistance from junction to ambient
BUW11F; BUW11AF
VALUE 3.95 3.05 35
UNIT K/W K/W K/W
thermal resistance from junction to external heatsink note 1
MIN. - - - - - - - - - - - - -65 -
MAX. 850 1000 400 450 3 2.5 5 10 2 4 32 41 +150 150 V V V V A A A A A A
UNIT
W W C C
TYP. - -
MAX. 1500 21 V
UNIT pF
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust PARAMETER collector-emitter sustaining voltage BUW11F BUW11AF collector-emitter saturation voltage BUW11F BUW11AF base-emitter saturation voltage BUW11F BUW11AF collector saturation current BUW11F BUW11AF collector-emitter cut-off current CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6
BUW11F; BUW11AF
MIN. 400 450 - - - - - - - - - 10 10
TYP. - - - - - - - - - - - 18 20
MAX. - - 1.5 1.5 1.4 1.4 3 2.5 1 2 10 35 35
UNIT V V V V V V A A mA mA mA
VCEsat
IC = 3 A; IB = 600 mA IC = 2.5 A; IB = 500 mA IC = 3 A; IB = 600 mA IC = 2.5 A; IB = 500 mA VCE = 1.5 V
VBEsat
ICsat
ICES
IEBO hFE
emitter-base cut-off current DC current gain
VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 C; note 1 VEB = 9 V; IC = 0 VCE = 5 V; IC = 5 mA; see Fig.7 VCE = 5 V; IC = 0.5 A; see Fig.7
Switching times resistive load (Figs 8 and 9) ton turn-on time BUW11F BUW11AF storage time BUW11F BUW11AF fall time BUW11F BUW11AF storage time BUW11F BUW11AF tf fall time BUW11F BUW11AF Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 14 4 ICon = 3 A; IBon = -IBoff = 600 mA ICon = 2.5 A; IBon = -IBoff = 500 mA ICon = 3 A; IBon = -IBoff = 600 mA ICon = 2.5 A; IBon = -IBoff = 500 mA ICon = 3 A; IBon = -IBoff = 600 mA ICon = 2.5 A; IBon = -IBoff = 500 mA - - - - - - - - - - - - 1 1 4 4 0.8 0.8 s s s s s s
ts
tf
Switching times inductive load (Figs 10 and 11) ts ICon = 3 A; IB = 600 mA; VCL = 250 V; Tc = 100 C ICon = 2.5 A; IB = 500 mA; VCL = 300 V; Tc = 100 C ICon = 3 A; IB = 600 mA; VCL = 250 V; Tc = 100 C ICon = 2.5 A; IB = 500 mA; VCL = 300 V; Tc = 100 C - - 2 2 2.5 2.5 s s
- -
200 200
300 300
ns ns
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
handbook, full pagewidth
102 IC (A) ICM max IC max
MGB930
10
II 1
10-1
I 10-2
10-3
BUW11F BUW11AF
10-4 1 10
102
103
VCE (V)
104
Mounted without heatsink compound and 30 5 N force on centre of package. Tmb < 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
MGK674
120 handbook, halfpage Ptot max (%) 80
handbook, halfpage
5
MGB894
IC (A)
4
3
2 40 1 BUW11F BUW11AF
0
0 0 50 100 Th (oC) 150 0 400 800 VCE (V) 1200
VBE = -1 to -5 V; Tc 100 C.
Fig.3 Power derating curve.
Fig.4 Reverse bias SOAR.
andbook, halfpage
+ 50 V 100 to 200 L
I halfpage handbook,C (mA) 250 200
MGE239
horizontal oscilloscope vertical 300 1
MGE252
100
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.5
Test circuit for collector-emitter sustaining voltage.
Fig.6
Oscilloscope display for collector-emitter sustaining voltage.
1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
10 2 handbook, halfpage
MBC095
handbook, halfpage
hFE
VCC
VCE = 5 V 1V 10 VIM 0 tp T
MGE244
RL RB D.U.T.
1 10-2
10-1
1
10 IC (A)
102
Tj = 125 C.
VCC = 250 V; tp = 20 s; VIM = -6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements.
Fig.7 DC current gain; typical values.
Fig.8 Test circuit resistive load.
handbook, halfpage
tr 30 ns IB on
MBB731
90% IB 10%
t IB off IC on
andbook, halfpage
VCC LC
+IB -VBE
90%
LB D.U.T.
VCL
IC
MGE246
10% ton tf ts VCL = up to 1000 V; VCC = 30 V; VBE = -1 V to -5 V; LB = 1 H; LC = 200 H. t
tr 20 ns.
Fig.9
Switching time waveforms with resistive load.
Fig.10 Test circuit inductive load and reverse bias SOAR.
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
handbook, halfpage
tr IB on
90% IB 10%
t
-IB off IC on
90%
IC
10% tf t
ts toff
MGE238
Fig.11 Switching time waveforms with inductive load.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE
BUW11F; BUW11AF
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
SOT199
E E1 m P A A1
q
D
L1 Q b1 L
1
e
2
b e1
3
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 4.8 A1 3.4 3.0 b 1.2 1.0 b1 2.1 1.9 c 0.6 0.5 D 21.5 20.5 E 15.3 14.7 E1 7.8 6.8 e 5.45 e1 10.9 L 16.5 15.7 L1
(1)
m 0.8 0.6
P 3.3 3.1
Q 2.1 1.9
q 6.2 5.8
w 0.4
45
3.7 3.3
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT199 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-27
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BUW11F; BUW11AF
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 14
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BUW11F; BUW11AF
1997 Aug 14
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02718

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